We report the growth and characterization of Ti nanoparticles thin film of on glass
substrate by pulse laser deposition method. The Ti thin film prepared with different
parameters (different energy 600,1000 mJ)and (different substrate temperature
150,200,250 ? ). Surface topography studied by atomic force microscopy revealed
narrowed size distributions, with particle sizes ranging from 19.18 to 65.89 nm. X-ray
diffraction showed nanostructured phase with ( 2? = 35.093 , 38.421 , 40.170 , 53.004,
62.49 degree). The results showed the Average Gran Size increased with increasing
substrate temperature and RMS roughness increased with increasing substrate
temperature. The results showed the increasing of energy pulse leads to increasing the
grain size .Optical properties measurements showed transformation from metallic
properties of bulk Ti to semiconductor properties when formed by sort of nanostructure
evidenced by the formation of optical energy gap about (2.2 to 3.5 eV) with different
conditions.